J. Phys. IV France
Volume 132, March 2006
Page(s) 35 - 39
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 35-39

DOI: 10.1051/jp4:2006132008

Structural and photoemission studies of SrF2 adsorption on Si(001)

L. Pasquali1, S.M. Suturin2, A. Balanev2, A.K. Kaveev2, N.S. Sokolov2, B.P. Doyle3, F. Borgatti3, A. Giglia3, N. Mahne3, M. Pedio3 and S. Nannarone1, 3

1  Department of Materials Engineering and INFM, University of Modena and Reggio Emilia, via Vignolese 905, 41100 Modena, Italy
2  Ioffe Physical-Technical Institute, RAS, Solid State Optics Department, Polytechnicheskaya Str., Saint Petersburg 194021, Russia
3  INFM-CNR, TASC Laboratory, Area Science Park, 34012 Trieste, Italy

The growth modes of SrF2 on Si(001) are investigated by AFM and ultraviolet photoemission. Two growth regimes are identified according to the substrate temperature during deposition, resulting in flat and ordered fluoride layers or in nano-patterned films with characteristic triangular islands. The flat layer growth obtained at high temperature is accompanied by molecular dissociation at the interface.

© EDP Sciences 2006