| Numéro |
J. Phys. IV France
Volume 131, December 2005
|
|
|---|---|---|
| Page(s) | 227 - 229 | |
| DOI | https://doi.org/10.1051/jp4:2005131057 | |
| Publié en ligne | 18 janvier 2006 | |
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 227-229
DOI: 10.1051/jp4:2005131057
1 Moscow Engineering-Physics Institute, 115409 Moscow, Russia
2 Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009 Moscow, Russia
© EDP Sciences 2005
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 227-229
DOI: 10.1051/jp4:2005131057
Effect of commensurability on the CDW deformation near a point contact
A.A. Sinchenko1 and V.Ya. Pokrovskii21 Moscow Engineering-Physics Institute, 115409 Moscow, Russia
2 Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009 Moscow, Russia
Abstract
The results of investigation of normal metal(Cu, Au)-CDW (K0.3MoO3)
point-contacts (PCs) in a wide range of temperature are reported. At
K the
contact characteristics are adequately described by the semiconducting model of CDW. At
T<70 K the I-V characteristics of PCs Cu-K0.3MoO3 demonstrate a
strain-compress asymmetry of the CDW. The observed behavior is likely to reveal the
lock-in transition (incommensurate-commensurate) due to the electric-field induced strain
of the CDW.
© EDP Sciences 2005