J. Phys. IV France
Volume 131, December 2005
Page(s) 227 - 229
Publié en ligne 18 janvier 2006
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 227-229

DOI: 10.1051/jp4:2005131057

Effect of commensurability on the CDW deformation near a point contact

A.A. Sinchenko1 and V.Ya. Pokrovskii2

1  Moscow Engineering-Physics Institute, 115409 Moscow, Russia
2  Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009 Moscow, Russia

The results of investigation of normal metal(Cu, Au)-CDW (K0.3MoO3) point-contacts (PCs) in a wide range of temperature are reported. At ${\rm T}>80$ K the contact characteristics are adequately described by the semiconducting model of CDW. At T<70 K the I-V characteristics of PCs Cu-K0.3MoO3 demonstrate a strain-compress asymmetry of the CDW. The observed behavior is likely to reveal the lock-in transition (incommensurate-commensurate) due to the electric-field induced strain of the CDW.

© EDP Sciences 2005