| Numéro |
J. Phys. IV France
Volume 131, December 2005
|
|
|---|---|---|
| Page(s) | 207 - 211 | |
| DOI | https://doi.org/10.1051/jp4:2005131051 | |
| Publié en ligne | 18 janvier 2006 | |
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 207-211
DOI: 10.1051/jp4:2005131051
Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan
© EDP Sciences 2005
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 207-211
DOI: 10.1051/jp4:2005131051
A new relaxation state of negative resistance in nano-fabricated CDW of K0.3MoO3
K. Morikawa, A. Goto, N. Shinjo, Y. Nishi, A. Fujii, A. Nakada and H. KubotaGraduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan
Abstract
New non-linear conduction states that are related to the negative
resistance phenomena in the nano-fabricated K0.3MoO3 are discussed. The
conduction states are dramatically shown by the magnitude of one-dimensionality. The
reason of the negative resistance was considered and related to the decrease of the
effective mass of CDW and reduction of weak-pinning effects of CDW due to
nano-fabrication in the form report. The negative resistance is described by using the
phase diagram of internal field-current characters.
© EDP Sciences 2005