| Numéro |
J. Phys. IV France
Volume 126, June 2005
|
|
|---|---|---|
| Page(s) | 107 - 112 | |
| DOI | https://doi.org/10.1051/jp4:2005126022 | |
J. Phys. IV France 126 (2005) 107-112
DOI: 10.1051/jp4:2005126022
Chemical etching of Gallium orthophosphate: Application to piezoelectric device manufacturing
N. Prud'homme, D. Cachau-Herreillat, P. Papet and O. CambonLaboratoire Physicochimie de la Matière Condensée, UMR CNRS 5617, Université Montpellier II, 34095 Montpellier Cedex 5, France
Abstract
This paper presents a study of the chemical etching of
gallium orthophosphate in the way to design high frequency resonators. Four
different orientations (X, Y, Z and AT-cuts) are used. The dissolution rate
is of Arrhenius law type and depends of both the cut orientation and the
concentration of the solvent. The study of the surface state evolution shows
that there is no correlation between the surface state and the dissolution
rate. Antimesa AT-plates with frequency up to 34MHz and QF factor of
are manufactured with this method.
© EDP Sciences 2005