J. Phys. IV France
Volume 126, June 2005
Page(s) 107 - 112

J. Phys. IV France 126 (2005) 107-112

DOI: 10.1051/jp4:2005126022

Chemical etching of Gallium orthophosphate: Application to piezoelectric device manufacturing

N. Prud'homme, D. Cachau-Herreillat, P. Papet and O. Cambon

Laboratoire Physicochimie de la Matière Condensée, UMR CNRS 5617, Université Montpellier II, 34095 Montpellier Cedex 5, France

This paper presents a study of the chemical etching of gallium orthophosphate in the way to design high frequency resonators. Four different orientations (X, Y, Z and AT-cuts) are used. The dissolution rate is of Arrhenius law type and depends of both the cut orientation and the concentration of the solvent. The study of the surface state evolution shows that there is no correlation between the surface state and the dissolution rate. Antimesa AT-plates with frequency up to 34MHz and QF factor of $2{\times}10^{11}$ are manufactured with this method.

© EDP Sciences 2005