Numéro
J. Phys. IV France
Volume 125, June 2005
Page(s) 439 - 442
DOI https://doi.org/10.1051/jp4:20051250103


J. Phys. IV France 125 (2005) 439-442

DOI: 10.1051/jp4:20051250103

Photoacoustic determination of thermal and electron transport properties of single crystal NiO

P.M. Nikolic1, D. Lukovic1, S. Savic1, D. Vasiljevic Radovic2, K. Radulovic2, S. Vujatovic1, L. Lukic3, M.V. Nikolic4, A. Bojicic1 and S. Djuric1

1  Institute of Technical Sciences of SASA, Knez Mihailova 35/IV, 11000 Belgrade, Serbia
2  Institute of Microelectronics Technologies and Single Crystals, Njegoseva 12, 11000 Belgrade, Serbia
3  IRITEL, Batajnicki put 23, Belgrade, Serbia
4  Center for Multidisciplinary Studies of Belgrade University, Kneza Viseslava 1, 11000 Belgrade, Serbia


Abstract
Thermal and electron transport properties of single crystal NiO were determined using the photoacoustic technique. NiO single crystals were prepared using the Verneuil method and were easily cleaved parallel to the (100) plane. All samples were of the p type. Atomic force microscopy images of cleaved NiO samples were made enabling a view of steps along the (001) direction and terraces, which were between 20 nm and 100 nm thick.



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