Laser-based measurements of temperature dependence of carrier mobility and lifetime in Si wafers using photocarrier radiometry

J. Batista; A. Mandelis; D. Shaughnessy

doi:doi:10.1051/jp4:2005125104

Numéro		J. Phys. IV France Volume 125, June 2005


Page(s)		443 - 445
DOI		https://doi.org/10.1051/jp4:2005125104

J. Phys. IV France 125 (2005) 443-445
DOI: 10.1051/jp4:2005125104

Laser-based measurements of temperature dependence of carrier mobility and lifetime in Si wafers using photocarrier radiometry

J. Batista^{1, 2}, A. Mandelis¹ and D. Shaughnessy¹

¹ Center for Advanced Diffusion-Wave Technologies (CADIFT), Dept. of Mechanical and Industrial Engineering, Univ. of Toronto, 5 King's College Road, Toronto, Ontario, M5S 3G8, Canada
² Departmento de Física, Universidade Federal do Maranhão, São Luís, MA 65085-580, Brazil

Abstract
In this work the photocarrier radiometric (PCR) technique has been used to determine the temperature dependence of carrier mobility and bulk lifetime in Si wafers. The noncontact, nonintrusive, and local monitoring nature of PCR surpasses the present available techniques for measuring carrier mobility. The results showed that the lifetime increases with temperature as T^1.6 and the temperature dependence of carrier mobility is $\mu (T) \propto T^{-2.5}$ cm²/Vs.