Numéro |
J. Phys. IV France
Volume 125, June 2005
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Page(s) | 97 - 100 | |
DOI | https://doi.org/10.1051/jp4:2005125022 |
J. Phys. IV France 125 (2005) 97-100
DOI: 10.1051/jp4:2005125022
Photothermal imaging of He+ ion implanted CdS
M. Paulraj1, S. Ramkumar2, K.P. Vijayakumar1, C. Sudhakartha1 and K.G.M. Nair31 Department of Physics, Cochin University of Science and Technology, Kochi 682022, India
2 Rajagiri School of Engineering and Technology, Rajagiri Valley, Kakkanad, Kochi 682030, India
3 Material Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, India
Abstract
CdS thinfilms implanted using He+ were studied using
photothermal deflection spectroscopy (PTD) setup, using perpendicular
pump-probe configuration. Samples were implanted with increasing ion energy
so as to allow the ion to penetrate greater depths. An attempt for
2-dimensional imaging of implanted regions of different samples was carried
out. Photothermal measurements were performed Samples were imaged for
various modulation frequencies. Modulation frequency at 800 Hz revealed a
maximum damaged layer, which corresponds approximately to the half the
thickness.
© EDP Sciences 2005