Numéro
J. Phys. IV France
Volume 125, June 2005
Page(s) 97 - 100
DOI https://doi.org/10.1051/jp4:2005125022


J. Phys. IV France 125 (2005) 97-100

DOI: 10.1051/jp4:2005125022

Photothermal imaging of He+ ion implanted CdS

M. Paulraj1, S. Ramkumar2, K.P. Vijayakumar1, C. Sudhakartha1 and K.G.M. Nair3

1  Department of Physics, Cochin University of Science and Technology, Kochi 682022, India
2  Rajagiri School of Engineering and Technology, Rajagiri Valley, Kakkanad, Kochi 682030, India
3  Material Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, India


Abstract
CdS thinfilms implanted using He+ were studied using photothermal deflection spectroscopy (PTD) setup, using perpendicular pump-probe configuration. Samples were implanted with increasing ion energy so as to allow the ion to penetrate greater depths. An attempt for 2-dimensional imaging of implanted regions of different samples was carried out. Photothermal measurements were performed Samples were imaged for various modulation frequencies. Modulation frequency at 800 Hz revealed a maximum damaged layer, which corresponds approximately to the half the thickness.



© EDP Sciences 2005