| Numéro |
J. Phys. IV France
Volume 123, March 2005
|
|
|---|---|---|
| Page(s) | 75 - 80 | |
| DOI | https://doi.org/10.1051/jp4:2005123012 | |
J. Phys. IV France 123 (2005) 75-80
DOI: 10.1051/jp4:2005123012
One, step electrodeposition of Cu(Ga,In)Se2 thin films from aqueous solution
M. Fahoume1, H. Boudraine1, M. Aggour1, F. Chraïbi2, A. Ennaoui2 and J.L. Delplancke31 L.P.M.C., Université Ibn Tofail, Faculté des Sciences, BP. 133, 14000 Kénitra, Maroc
2 L.P.M., Université Mohammed V, Faculté des Sciences, BP. 1014, Rabat, Maroc
3 Service de Sciences des Matériaux et Électrochimie, Faculté des Sciences Appliquées, ULB avenue F.D. Roosevelt 50, 1050 Bruxelles, Belgium
Abstract
Cu(In,Ga)Se2 (CIGS) semiconducting thin films
films were prepared by electrodeposition from aqueous solution containing
CuCl2, InCl3, GaCl3 and H2SeO3. The deposited
material was characterized by cyclic voltammetry. The compositional,
structural studies were carried out using scanning electron microscopy
(SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD)
and transmission electron microscopy (TEM). X-ray analysis showed the
formation of CuIn
Ga
Se2 films, in the optimum conditions,
with preferred orientation in the (112) direction. We observed a shift of
the peaks to higher angles with increasing x, accounting for a decrease of
the lattice constants when In atoms are substituted by Ga atoms. Element
mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are
homogeneously distributed.
© EDP Sciences 2005