| Numéro |
J. Phys. IV France
Volume 123, March 2005
|
|
|---|---|---|
| Page(s) | 47 - 51 | |
| DOI | https://doi.org/10.1051/jp4:2005123007 | |
J. Phys. IV France 123 (2005) 47-51
DOI: 10.1051/jp4:2005123007
Electrodeposition of CuInSe2 thin films
K. Bouabid1, A. Ihlal1, A. Manar1, A. Sdaq1, A. Outzourhit2 and E.L. Ameziane21 Équipe de Physique des Semi-Conducteurs, Département de Physique, Faculté des Sciences, BP. 8106, Université Ibn Zohr, Agadir, Maroc
2 Laboratoire de Physique des Solides et des Couches Minces, Département de Physique, Faculté des Sciences Semlalia, BP. S/3293, Marrakech, Maroc
Abstract
CuInSe2 thin films were prepared by one step
electrodeposition from reagents CuSO4, In2(SO4)3,
SeO2 and using citric acid as complexing agent. The influence of
deposition parameters (electrolyte composition, concentration of reagent and
deposition potential) on film composition was studied. The structure,
composition, morphology and opto-electric properties of as deposited and of
annealed films were investigated. The stoichiometric CuInSe2 were
obtained at concentration of reagent: 3, 3 and 5mM respectively at
potentials varying between -500 and -700 mV. The formation of chalcopyrite
phase of CuInSe2 was confirmed by X-ray diffraction for samples
annealed at temperature above 350
C. The concentration of
In2(SO4)3 affects the composition of In and Se in the films.
Optical absorption studies indicate band gap values between 1.01 and 1.10
eV. The electrical resistivity of the films at room temperature is in the
order of 10 
cm.
© EDP Sciences 2005