| Numéro |
J. Phys. IV France
Volume 123, March 2005
|
|
|---|---|---|
| Page(s) | 53 - 57 | |
| DOI | https://doi.org/10.1051/jp4:2005123008 | |
J. Phys. IV France 123 (2005) 53-57
DOI: 10.1051/jp4:2005123008
CuIn1-xGaxSe2 thin films prepared by one step electrodeposition
K. Bouabid1, A. Ihlal1, A. Manar1, A. Outzourhit2 and E.L. Ameziane21 Équipe de Physique des Semi-Conducteurs, Département de Physique, Faculté des Sciences, BP. 8106, Université Ibn Zohr, Agadir, Maroc
2 Laboratoire de Physique des Solides et des Couches Minces, Département de Physique, Faculté des Sciences Semlalia, BP. S/3293, Marrakech, Maroc
Abstract
CuIn
Ga
Se2 thin films were deposited
onto Mo and SnO2 coated glass substrates at potentials in the interval
-350 to -600 mV by one step electro-deposition from reagents CuSO4,
In2(SO4)3, SeO2 and Ga2(SO4)3. The influence
of Ga2(SO4)3 concentration on the compositions of the films
was studied. The crystalline structure, composition, morphology,
opto-electronic properties of the as-deposited and annealed films was
investigated. The films annealed under vacuum at 400 
C are
polycristallins and show preferred orientation (112) as confirmed by X-ray
diffraction analysis. Optical absorption studies of these films indicated
that the band gap value for x = 0.32 is of about 1.25 eV.
© EDP Sciences 2005