J. Phys. IV France
Volume 115, June 2004
|Page(s)||59 - 66|
J. Phys. IV France 115 (2004) 59
Characterization and modeling of domain engineered relaxor ferroelectric single crystalsA. Malbec, T. Liu and C.S. Lynch
The GWW School of Mechanical Engineering, The Georgia Institute of Technology, Atlanta, GA 30332-0405, USA
This work describes a measurement and modeling effort directed at improving our understanding of relaxor single crystals of PZN-xPT and PMN-xPT. Results include electromechanical characterization, crystal variant modeling, and modeling of field induced phase transitions. Key results include reducing high cycle fatigue by elimination of sharp corners on bulk specimens and development of engineered domain states other than  in rhombohedral compositions. The latter development coupled with the modeling work has led to identification and characterization of the  cut with properties optimized for d 31 and d 32 applications.
© EDP Sciences 2004