Numéro |
J. Phys. IV France
Volume 115, June 2004
|
|
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Page(s) | 59 - 66 | |
DOI | https://doi.org/10.1051/jp4:2004115007 |
J. Phys. IV France 115 (2004) 59
DOI: 10.1051/jp4:2004115007
Characterization and modeling of domain engineered relaxor ferroelectric single crystals
A. Malbec, T. Liu and C.S. LynchThe GWW School of Mechanical Engineering, The Georgia Institute of Technology, Atlanta, GA 30332-0405, USA
Abstract
This work describes a measurement and modeling effort directed at improving
our understanding of relaxor single crystals of PZN-xPT and PMN-xPT. Results
include electromechanical characterization, crystal variant modeling, and
modeling of field induced phase transitions. Key results include reducing high cycle fatigue by elimination of sharp corners
on bulk specimens and
development of engineered domain states other than [001] in rhombohedral
compositions. The latter development coupled with the modeling work has
led to identification and characterization of the [001] cut with properties
optimized for d
31 and d
32 applications.
© EDP Sciences 2004