Numéro |
J. Phys. IV France
Volume 115, June 2004
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Page(s) | 47 - 56 | |
DOI | https://doi.org/10.1051/jp4:2004115006 |
J. Phys. IV France 115 (2004) 47
DOI: 10.1051/jp4:2004115006
An ion implantation processing technique used to develop shape memory TiNi thin film micro-actuator devices
T. LaGrange and R. GotthardtSwiss Federal Institute of Technology Lausanne (EPFL), Department of Basic Sciences, Institute of Physics of Complex Matter, 1015 Lausanne, Switzerland
Abstract
Since shape memory alloys (SMA) thin films can recover large
deformations and generate high recovery forces, there has been great
interest to use them as the active elements in microactuator systems.
We have studied a novel planar processing technique using ion irradiation
to develop a thin film micro-actuator. In this technique, SMA thin
film are first pre-strained to values ~ 4%, and then ion irradiated
with 5 MeV Ni ions. Theoretically, the irradiation-induced damage can
suppress the martensitic transformation (MT) in a layer, whose thickness
is chosen to be on the order of 1/2 to 1/3 the films thickness. When
heated above the austenite finish temperature, large differential strains
are created between the still transforming and damage layer, causing the
film to bend out of plane. The partial energy stored in the damaged
layer, from the prior transformation, is available to deform the
martensite on subsequent cooling and MT, which causes an uncurling of
the film. Thus, with thermal cycling, a reversible two-way motion
occurs. We have studied the phase transformations in irradiated
microstructure by TEM, thermomechanical tests, and X-ray diffraction.
We have found that the irradiation damage mainly consists of
amorphous matrix with nanocrystalline islands. The results will
be discussed in terms of the effects of irradiation on the microstructure
and its relationship with the film's motion.
© EDP Sciences 2004