J. Phys. IV France
Volume 114, April 2004
Page(s) 673 - 675

J. Phys. IV France
114 (2004) 673
DOI: 10.1051/jp4:2004114161

Effect of bias electric field upon surface polaron at fet junction on molecular crystal

N. Kirova1, 1 and M.-N. Bussac2

1  POMA, UMR 6136 CNRS-Université d'Angers, UFR Sciences, 2 Bd. Lavoisier, 49045 Angers, France
2  CPHT, UMR 7644, École Polytechnique, 91128 Palaiseau, France

For the molecular crystal field effect transistor (FET) with the gate polar dielectrics, we study the effect of the bias electric field E on the formation of the long range polaron at the molecular crystal/gate dielectric interface. Numerical studies for polaron binding energy, effective mass and wave function as a function of E are performed. Key words. molecular crystal, polaron, FET.

© EDP Sciences 2004