| Numéro |
J. Phys. IV France
Volume 114, April 2004
|
|
|---|---|---|
| Page(s) | 673 - 675 | |
| DOI | https://doi.org/10.1051/jp4:2004114161 | |
J. Phys. IV France 114 (2004) 673
DOI: 10.1051/jp4:2004114161
Effect of bias electric field upon surface polaron at fet junction on molecular crystal
N. Kirova1, 1 and M.-N. Bussac21 POMA, UMR 6136 CNRS-Université d'Angers, UFR Sciences, 2 Bd. Lavoisier, 49045 Angers, France
2 CPHT, UMR 7644, École Polytechnique, 91128 Palaiseau, France
Abstract
For the molecular crystal field effect transistor (FET)
with the gate polar dielectrics, we
study the effect of the bias
electric field
E on the formation of the long range polaron at the
molecular crystal/gate dielectric interface. Numerical studies for polaron
binding energy, effective
mass and wave function as a function of
E are performed.
Key words. molecular crystal, polaron, FET.
© EDP Sciences 2004