Numéro |
J. Phys. IV France
Volume 114, April 2004
|
|
---|---|---|
Page(s) | 523 - 525 | |
DOI | https://doi.org/10.1051/jp4:2004114123 |
J. Phys. IV France 114 (2004) 523
DOI: 10.1051/jp4:2004114123
Crystal and electronic structures of
-(BEDT-TTF)
I
under uniaxial strains
R. Kondo1, 1 and S. Kagoshima1
1 Department of Basic Science, University of Tokyo, 3-8-1, Komaba, Meguro-ku, Tokyo 153-8902, Japan
Abstract
In order to investigate relationships between the crystal
structure and electronic properties, crystal structure analyses of
-(BEDT-TTF)
2I
3 were performed under in-plane uniaxial strains. It
is known that, at ambient pressure, this salt has a semimetallic electronic
structure having hole and electronic pockets, and undergoes a
metal-insulator transition at 135 K due to a charge disproportionation on
BEDT-TTF molecules. Present structure analyses showed that the sizes of both
hole and electron like pockets on the Fermi surface rather decreased under
a-axial strain, while those of hole ones increased under
b-axial strain. These
results are qualitatively consistent with observed behaviors of the
metal-insulator transition under uniaxial strains.
Key words. Organic conductor; Uniaxial strain; Crystal structure
analysis.
© EDP Sciences 2004