Issue
J. Phys. IV France
Volume 114, April 2004
Page(s) 523 - 525
DOI https://doi.org/10.1051/jp4:2004114123


J. Phys. IV France
114 (2004) 523
DOI: 10.1051/jp4:2004114123

Crystal and electronic structures of $\mathsf{\alpha}
$ -(BEDT-TTF) $\mathsf{_{2}}$I $\mathsf{_{3}}$ under uniaxial strains

R. Kondo1, 1 and S. Kagoshima1

1  Department of Basic Science, University of Tokyo, 3-8-1, Komaba, Meguro-ku, Tokyo 153-8902, Japan


Abstract
In order to investigate relationships between the crystal structure and electronic properties, crystal structure analyses of $\alpha
$ -(BEDT-TTF) 2I 3 were performed under in-plane uniaxial strains. It is known that, at ambient pressure, this salt has a semimetallic electronic structure having hole and electronic pockets, and undergoes a metal-insulator transition at 135 K due to a charge disproportionation on BEDT-TTF molecules. Present structure analyses showed that the sizes of both hole and electron like pockets on the Fermi surface rather decreased under a-axial strain, while those of hole ones increased under b-axial strain. These results are qualitatively consistent with observed behaviors of the metal-insulator transition under uniaxial strains. Key words. Organic conductor; Uniaxial strain; Crystal structure analysis.



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