Numéro
J. Phys. IV France
Volume 104, March 2003
Page(s) 67 - 70
DOI https://doi.org/10.1051/jp4:200300031


J. Phys. IV France
104 (2003) 67
DOI: 10.1051/jp4:200300031

A scanning photoelectron microscope for materials science spectromicroscopy at the Pohang Light Source

H.J. Shin1, 2, M.K. Lee1, G.B. Kim2, C.K. Hong2, J.Y. Lee3, J.W. Kim3, S.M. Park3, Y.S. Roh4 and K. Jeong4

1  Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, Korea
2  Department of Physics, POSTECH, Pohang, Korea
3  Department of Chemistry and Center for Integrated Molecular Systems and School of Environmental Science and Engineering, POSTECH, Pohang, Korea
4  Department of Physics, Yonsei University, Seoul, Korea


Abstract
A Fresnel zone plate based SPEM (scanning photoelectron microscope) is in operation at the Pohang Light Source. Space resolution of the SPEM is typically, $\lesssim $1 $\mu$m (0.4 $\mu$m in the best resolution) and the photon flux at the focused spot is ~10 9 photons/s. The SPEM is working in the energy range between 400 and 1,000 eV. In taking images and spectra, the SPEM detects photoelectrons from the focused spot using a hemispherical analyzer with 16-channel detection capability at energy resolution of ~0.5 eV. The SPEM also measures sample current, with which comparative x-ray absorption micro-spectroscopy is available in limited energy range with spectral resolving power (E/ $\Delta$E) of ~3,000. The advantage of detecting sample current image and x-ray absorption spectrum at the Fe L $_{\rm lll}$,-edge is demonstrated for understanding the effect of electrochemically deposited Zn layer on Fe substrate.



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