J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 79 - 82

J. Phys. IV France
12 (2002) Pr3-79
DOI: 10.1051/jp420020041

Semiconductor microcrystals with ultra-high sensitivity to mechanical strain at cryogenic temperatures

A. Druzhinin1, E. Lavitska1, I. Maryamova1, T. Palewski2 and A. Kutrakov1

1  Polytechnic University, Kotlarevsky Str. 1, Lviv 79013, Ukraine
2  International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland

Results of the studies of the low-temperature piezoresistance for p-type silicon microcrystals doped with boron up to $N=7\times 10^{17}-1\times 10^{19}$ cm -3 are presented. The dependence of piezoresistance on impurity concentration and temperature was studied. The extremely high piezoresistance was found at the lowest temperatures 4.2-20 K in samples with boron concentration corresponding to the insulating side of the metal-insulator transition in the vicinity of it. A practical application of such a giant piezoresistance in mechanical sensors for cryogenic temperatures is discussed.

© EDP Sciences 2002