| Numéro |
J. Phys. IV France
Volume 12, Numéro 3, May 2002
|
|
|---|---|---|
| Page(s) | 79 - 82 | |
| DOI | https://doi.org/10.1051/jp420020041 | |
J. Phys. IV France 12 (2002) Pr3-79
DOI: 10.1051/jp420020041
Semiconductor microcrystals with ultra-high sensitivity to mechanical strain at cryogenic temperatures
A. Druzhinin1, E. Lavitska1, I. Maryamova1, T. Palewski2 and A. Kutrakov11 Polytechnic University, Kotlarevsky Str. 1, Lviv 79013, Ukraine
2 International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland
Abstract
Results of the studies of the low-temperature piezoresistance for p-type silicon microcrystals doped with boron up to
cm
-3 are presented. The dependence of piezoresistance on impurity concentration and temperature was studied. The extremely high
piezoresistance was found at the lowest temperatures 4.2-20 K in samples with boron concentration corresponding to the insulating
side of the metal-insulator transition in the vicinity of it. A practical application of such a giant piezoresistance in mechanical
sensors for cryogenic temperatures is discussed.
© EDP Sciences 2002