Semiconductor microcrystals with ultra-high sensitivity to mechanical strain at cryogenic temperatures

A. Druzhinin; E. Lavitska; I. Maryamova; T. Palewski; A. Kutrakov

doi:doi:10.1051/jp420020041

Numéro		J. Phys. IV France Volume 12, Numéro 3, May 2002


Page(s)		79 - 82
DOI		https://doi.org/10.1051/jp420020041

J. Phys. IV France 12 (2002) Pr3-79
DOI: 10.1051/jp420020041

Semiconductor microcrystals with ultra-high sensitivity to mechanical strain at cryogenic temperatures

A. Druzhinin¹, E. Lavitska¹, I. Maryamova¹, T. Palewski² and A. Kutrakov¹

¹ Polytechnic University, Kotlarevsky Str. 1, Lviv 79013, Ukraine
² International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland

Abstract
Results of the studies of the low-temperature piezoresistance for p-type silicon microcrystals doped with boron up to $N=7\times 10^{17}-1\times 10^{19}$ cm ^-3 are presented. The dependence of piezoresistance on impurity concentration and temperature was studied. The extremely high piezoresistance was found at the lowest temperatures 4.2-20 K in samples with boron concentration corresponding to the insulating side of the metal-insulator transition in the vicinity of it. A practical application of such a giant piezoresistance in mechanical sensors for cryogenic temperatures is discussed.