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Numéro
J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 75 - 78
DOI https://doi.org/10.1051/jp420020040


J. Phys. IV France 12 (2002) Pr3-75
DOI: 10.1051/jp420020040

Forming PbTe on Si-substrates for IR sensors

V.I. Rudakov and I.M. Smirnov

Institute of Microelectronics and Informatics, Russian Academy of Sciences, Street University 21, Yaroslavl 150007, Russia


Abstract

The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly on 100 mm Si substrate using a barium fluoride (BaF 2) buffer layer. BaF 2 buffer layer was used to overcome the large lattice and thermal expansion mismatch. Structure characteristics of the PbTe films grown on silicon substrates with the BaF 2 buffer layer were investigated by x - ray phase analysis. We have fabricated PbTe on Si sensor with cutoff wavelength 5,2  $\mu$m.



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