Temperature dependence of generation-recombination noise in ${p{-}n}$ junctions

J.A. Jiménez Tejada; A. Godoy; A. Palma; P. Cartujo

doi:doi:10.1051/jp420020039

Numéro		J. Phys. IV France Volume 12, Numéro 3, May 2002


Page(s)		71 - 74
DOI		https://doi.org/10.1051/jp420020039

J. Phys. IV France 12 (2002) Pr3-71
DOI: 10.1051/jp420020039

Temperature dependence of generation-recombination noise in p-n junctions

J.A. Jiménez Tejada, A. Godoy, A. Palma and P. Cartujo

Departamento Electronica y Tecnologia de Computadores, Facultad de Ciencias, Universidad de Granada, Avenida Fuentenueva s/n, 18071 Granada, Spain

Abstract
Fundamental aspects of the p-n junction have been considered in order to obtain an analytical model for generation-recombination (g-r) current noise. Considering neutrality and fixed-bias voltage conditions a fluctuation in the charge trapped in deep levels is related to fluctuations of the charge density and the electric field at the borders of the space-charge region. These variations are then converted to current fluctuations making use of a collective transport noise theory. Generation-recombination current noise in p-n junctions is analyzed at low and high temperatures for different bias conditions.