J. Phys. IV France
Volume 12, Numéro 3, May 2002
|Page(s)||67 - 70|
J. Phys. IV France 12 (2002) Pr3-67
Ge semiconductor devices for cryogenic power electronics - IIR.R. Ward1, W.J. Dawson1, R.K. Kirschman1, O. Mueller2, R.L. Patterson3, J.E. Dickman3 and A. Hammoud4
1 GPD Optoelectronics Corp., 7 Manor Parkway, Salem, New Hampshire 03079, U.S.A.
2 LTE, Low Temperature Electronics, Ballston Lake, New York 12019, U.S.A.
3 NASA Glenn Research Center, Cleveland, Ohio 44135, U.S.A.
4 QSS Group Inc., Cleveland, Ohio, U.S.A.
We have begun investigation and development of cryogenic semiconductor power devices (diodes, bipolar transistors and field-effect transistors) based on germanium. The motivation is NASA's interest in electronics that can operate down to deep cryogenic temperatures (as low as K) for exploration of the outer planets and other Solar System bodies that present cold environments as well as for future space observatories. There are also potential applications related to cryogenic/superconducting motors and generators and power distribution and storage. We have characterized available Ge diodes and bipolar transistors at cryogenic temperatures and have begun examining MIS (metal-insulator-semiconductor) capacitors on Ge. Our investigations show that all these types of devices can operate from room temperature down to 20 K or lower.
© EDP Sciences 2002