| Numéro |
J. Phys. IV France
Volume 12, Numéro 3, May 2002
|
|
|---|---|---|
| Page(s) | 27 - 30 | |
| DOI | https://doi.org/10.1051/jp420020031 | |
J. Phys. IV France 12 (2002) Pr3-27
DOI: 10.1051/jp420020031
New silicon devices beyond CMOS
E. Suzuki, K. Ishii and T. SekigawaNanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
Abstract
Silicon technologies have successively progressed in past half a century. To continue the development
in the 21
century, we need to consider and prepare new silicon devices in the range of deca-nano-meter. The suppression of the short-channel
effect improving device performance is an important consideration in such an ultra small device. We review the development
of the double-gate-type MOS device as an emerging device, and discuss the technology directions.
© EDP Sciences 2002