J. Phys. IV France
Volume 12, Numéro 3, May 2002
|Page(s)||27 - 30|
J. Phys. IV France 12 (2002) Pr3-27
New silicon devices beyond CMOSE. Suzuki, K. Ishii and T. Sekigawa
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
Silicon technologies have successively progressed in past half a century. To continue the development in the 21 century, we need to consider and prepare new silicon devices in the range of deca-nano-meter. The suppression of the short-channel effect improving device performance is an important consideration in such an ultra small device. We review the development of the double-gate-type MOS device as an emerging device, and discuss the technology directions.
© EDP Sciences 2002