J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 133 - 136

J. Phys. IV France
12 (2002) Pr3-133
DOI: 10.1051/jp420020052

Low- $T_{\rm c}$ ramp-type Josephson junctions for SQUIDS

M. Podt, B.G.A. Rolink, J. Flokstra and H. Regalia

Low Temperature Division, Department of Applied Physics, University of Twente, P.O. Box 217, 7500 Enschede, The Netherlands

The Josephson tunnel junction is the basic element of a superconducting quantum interference device (SQUID). Amongst other parameters, the junction capacitance determines the characteristics of a (digital) SQUID. In a conventional dc SQUID, reducing the junction capacitance decreases the flux noise of the sensor, whereas in digital SQUIDS, the operating frequency can be increased when reducing the junction capacitance. For digital SQUIDs, this means that not only the flux noise decreases, but also the flux slew rate increases Slew rates up to $10^8 \Phi_0/s$ can be achieved by reducing the junction size to the sub- ${\mu}m^2$ level. Using a ramp-type structure allows sub- ${\mu}m^2$ Josephson junctions sizes using standard lithography. In this paper we present the first results on low- Tc ramp-type Josephson junctions and dc SQUIDs based on these junctions. The first junctions and SQUIDs showed nonhysteretic behavior at 4.2 K caused by the Al bottom layer in the design.

© EDP Sciences 2002