| Numéro |
J. Phys. IV France
Volume 11, Numéro PR11, Décembre 2001
International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures
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| Page(s) | Pr11-145 - Pr11-149 | |
| DOI | https://doi.org/10.1051/jp4:20011123 | |
J. Phys. IV France 11 (2001) Pr11-145-Pr11-149
DOI: 10.1051/jp4:20011123
rf-sputtering of PMNT thin films
E. Fribourg-Blanc1, 2, E. Cattan1, D. Remiens1, M. Dupont2 and D. Osmont21 Département MIMM, Université de Valenciennes, ZI Champ de l'Abbesse, 59600 Maubeuge, France
2 ONERA, 29 avenue de la Division Leclerc, BP. 72, 92322 Châtillon, France
Abstract
We report on the realization of relaxor ferroelectric thin films by rf magnetron sputtering deposition. We investigated fabrication of films in the solid solution of PMN (Pb(Mg1/3Nb2/3)O3) with PT (PbTiO3). This material is the most studied among the relaxor ferroelectric family for applications in the field of microelectronics and microsystems. We chose the composition with 30% of PT, close to the morphotropic phase boundary between relaxor and normal ferroelectric behavior which exhibits good piezoelectric properties suited to actuators. We have grown the films in a cold deposition process. The substrates used were Si/SiO2 coated by Ti/Pt electrodes. This allowed to synthesize pyrochlore-free PMNT ceramic thin films at temperatures between 450 and 675°C in a postdeposition conventional annealing. We performed dielectric and ferroelectric characterizations of the films with Pt upper electrodes. Dielectric constant was measured as a function of temperature (up to 155°C) and frequency (1 kHz ~ 1 MHz). We obtained relative dielectric constant of the order of 1500. Relaxor behavior and ferroelectric properties are evidenced and are shown to be enhanced by annealing temperature.
© EDP Sciences 2001