J. Phys. IV France
Volume 11, Numéro PR3, Août 2001Thirteenth European Conference on Chemical Vapor Deposition
|Page(s)||Pr3-771 - Pr3-778|
J. Phys. IV France 11 (2001) Pr3-771-Pr3-778
RMPECVD of silica films with a high microwave power (1600 W) parametric studiesP. Tristant, J. Desmaison, F. Naudin and D. Merle
Laboratoire de Sciences des Procédés Céramiques et Traitements de Surface (SPCTS), ENSIL, Université de Limoges, UMR 6638 du CNRS, 123 avenue Albert Thomas, 87060 Limoges cedex, France
In a large scale plasma reactor, a high microwave power of 1600 W is necessary to obtain a homogeneous distribution of the plasma source. The increase of the microwave power allows to decrease the substrate temperature during the process (150 °C) with the formation of a dense silicon oxide layer. In the range of variation of the parameters studied (pressure, temperature, R (oxygen flow rate / silane flow rate)) little variations of the film characteristics (density, etch rate, ...) are observed. However, the ERDA analysis shows that a low pressure (0.13 mbar) and a limitation of the deposition rate (R = 160) allow to reduce the incorporation of impurities (H,C) in the oxide films. The FTIR spectra, systematically studied by the position, the full width at half-maximum and the area of the Si-O-Si band, enable to point out the composition and the morphology evolution of silicon oxide coatings and corroborate the previous results.
© EDP Sciences 2001