| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-755 - Pr3-762 | |
| DOI | https://doi.org/10.1051/jp4:2001395 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-755-Pr3-762
DOI: 10.1051/jp4:2001395
Laboratoire de Science et Génie des Surfaces, UMR 7570 du CNRS, INPL-EdF, École des Mines, Parc de Saurupt, 54042 Nancy cedex, France
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-755-Pr3-762
DOI: 10.1051/jp4:2001395
Aluminium nitride synthesis by RPECVD
T. Belmonte, J.Y. Poussardin, L. Lefèvre and H. MichelLaboratoire de Science et Génie des Surfaces, UMR 7570 du CNRS, INPL-EdF, École des Mines, Parc de Saurupt, 54042 Nancy cedex, France
Abstract
Aluminium nitride was synthesised by remote microwave plasma enhanced chemical vapour deposition.
At temperature in the range [823 K - 923 K], AIN thin films were synthesised by reaction between AlCl3 and a late Ar- N2-H2 post-discharge. Nitrogen atoms are very likely the main reactive species of the post-discharge which react with aluminium trichloride to produce AIN. The composition of the gas phase was studied by optical emission spectroscopy and NO titration to determine the highest density of nitrogen atoms. Highest deposition rates are close to 3 µm.h-1. Composition of the thin film is strongly dependent on the operating parameters. In most cases, the measured atomic ratio N/Al is greater than 1.
© EDP Sciences 2001