J. Phys. IV France
Volume 11, Numéro PR3, Août 2001Thirteenth European Conference on Chemical Vapor Deposition
|Page(s)||Pr3-577 - Pr3-584|
J. Phys. IV France 11 (2001) Pr3-577-Pr3-584
Growth of InN whiskers from single source precursorA. Devi, H. Parala, W. Rogge, A. Wohlfart, A. Birkner and R.A. Fischer
Lehrstuhl für Anorganische Chemie II, Organometallics and Materials Chemistry, Ruhr-University Bochum, Universitaetsstrasse 150, 44780 Bochum, Germany
The group-III nitrides GaN, InN, AIN and their alloys InxGa1-xN, AlxGa1-xN have recently acquired technological importance for LED and laser applications. However, InN has a low decomposition temperature and the growth of crystalline InN material at low temperatures is difficult. One of the approaches is to design single source precursors that decompose at low temperatures. Single source precursors of the type N3In[(CH2)3NMe2]2 were developed and the growth of crystalline InN films with preferred orientation was achieved using this compound. However employing specific CVD process parameters we were able to grow InN whiskers consistently by CVD using a cold wall CVD reactor on sapphire substrates at 500°C. These whiskers were characterised by XRD, SEM, EDX and TEM measurements.
© EDP Sciences 2001