| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-525 - Pr3-530 | |
| DOI | https://doi.org/10.1051/jp4:2001366 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-525-Pr3-530
DOI: 10.1051/jp4:2001366
1 Physikalische Chemie I, Fakultät für Chemie, Universität Bielefeld, Universitätsstr. 25, 33615 Bielefeld, Germany
2 Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, U.S.A.
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-525-Pr3-530
DOI: 10.1051/jp4:2001366
Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor
B. Atakan1 and Z.-J. Liu21 Physikalische Chemie I, Fakultät für Chemie, Universität Bielefeld, Universitätsstr. 25, 33615 Bielefeld, Germany
2 Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, U.S.A.
Abstract
In the present work, gallium nitride was grown by MOCVD from trimethylgallium and ammonia with and without the addition of propylamine. The usage of propylamine showed considerable advances, concerning the morphology, compared to the standard mixture. The elemental composition as well as the Raman spectra were measured and show that GaN films with only small amounts of impurities were deposited. GaN growth was found on sapphire and silicon substrates. In gas phase studies of TMG/propylamine mixtures at different temperatures, two Lewis acid-base-complexes were detected, which dissociate at higher temperatures.
© EDP Sciences 2001