| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-349 - Pr3-356 | |
| DOI | https://doi.org/10.1051/jp4:2001344 | |
J. Phys. IV France 11 (2001) Pr3-349-Pr3-356
DOI: 10.1051/jp4:2001344
Influence of hydrogen on chemical beam epitaxy of GaAs using triethylgallium and diethylarsine
F. Maury1 and E. Bedel-Pereira21 Centre Interuniversitaire de Recherche et Ingénierie des Matériaux (CIRIMAT), CNRS/INPT, École Nationale Supérieure de Chimie, 118 route de Narbonne, 31077 Toulouse cedex 4, France
2 Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), CNRS, 7 avenue du Colonel Roche, 31077 Toulouse cedex 4, France
Abstract
Epitaxial growth of GaAs layers has been studied under very low pressure using organometallic precursors as element sources. These films have been deposited on GaAs(100) in the temperature range 550-650 °C using GaEt3 and AsEt2H. The composition, the structural quality and the growth rate of the layers depend essentially on As:Ga molecular ratio, the deposition temperature and the distance between the injector and the substrate. Without H2 flux, evidence for islanding growth was observed and a high carbon contamination of the layers was revealed by photoluminescence. In presence of molecular hydrogen, a layer-by-layer growth mode occurs and, in addition, carbon incorporation is drastically reduced. Optimal deposition conditions have been determined for this organometallic system in good agreement with a parallel study on in situ analysis of the growth by near-threshold photoemission.
© EDP Sciences 2001