J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-1175 - Pr3-1182
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-1175-Pr3-1182

DOI: 10.1051/jp4:20013148

GaN heteroepitaxy by remote plasma MOCVD : Real time monitoring by laser reflectance interferometry

M. Losurdo, A. Grimaldi, M. Giangregorio, P. Capezzuto and G. Bruno

Plasma Chemistry Research Center-CNR, Via Orabona 4, 70126 Bari, Italy

Epitaxial growth of GaN is carried out by r.f. remote plasma metalorganic chemical vapor deposition (RP-MOCVD) using trimethylgallium and N2-H2 plasmas as precursor of gallium and nitrogen, respectively. The RP-MOCVD leads to different growth kinetics and surface morphology depending on trimethylgallium and hydrogen fluxes. In situ laser reflectance interferometry (LRI) is used to monitor in real time the growth rate, the thickness, the surface roughness, rms, and the optical absorption of the GaN growing epilayers and their dependence on growth parameters. In particular, a strong degradation of surface morphology and GaN faceting is observed when growth is carried out under nitrogen- and hydrogen-rich conditions. Moreover, depending on the growth rate, the transition from a layer-by-layer (2D) growth to an islands (3D) growth can be discriminated by LRI. Reflectivity data are corroborated by AFM measurements.

© EDP Sciences 2001