Numéro
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-1087 - Pr3-1094
DOI https://doi.org/10.1051/jp4:20013136
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-1087-Pr3-1094

DOI: 10.1051/jp4:20013136

Single source MOCVD system for deposition of superconducting films onto moved tapes

O. Stadel1, J. Schmidt1, N.V. Markov1, 2, S.V. Samoilenkov1, G. Wahl1, C. Jimenez3, F. Weiss3, D. Selbmann4, J. Eickemeyer4, O.Yu. Gorbenko2, A.R. Kaul2 and A. Abrutis5

1  Institut für Oberflächentechnik und Plasmatechnische Werkstoffentwicklung (IOPW), Technische Universität Braunschweig, Braunschweig, Germany
2  Department of Chemistry, Moscow State University (MSU), Moscow, Russia
3  Laboratoire des Matériaux et du Génie Physique (LMGP), ENSPG, Grenoble, France
4  Institut für Festkörper und Werkstofforschung Dresden (IFW), Dresden, Germany
5  Vilnius University, Lithuania


Abstract
A new single source MOCVD-system was developed, which can be used to coat continuously textured Nickel tapes. To test the YBCO deposition single crystals and IBAD buffered substrates were continuously transported with 4 m/h through the deposition zone. The critical current density of the superconducting layers at 77 K is higher than 4 MA/cm2 on single crystalline LaAlO3 and higher than 2 MA/cm2 on IBAD buffered tapes. Two routes for the buffer layer deposition on Ni are chosen : a) NiO is epitaxially grown onto textured Ni by thermal oxidation. b) In reducing atmosphere textured buffer layers were deposited onto nickel.



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