| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
|
|
|---|---|---|
| Page(s) | Pr3-1073 - Pr3-1077 | |
| DOI | https://doi.org/10.1051/jp4:20013134 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-1073-Pr3-1077
DOI: 10.1051/jp4:20013134
1 AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany
2 Stepanov Institute of Physics, National Academy of Sciences of Belarus, F. Skaryna Ave. 68, 220072 Minsk, Belarus
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-1073-Pr3-1077
DOI: 10.1051/jp4:20013134
Group-III nitride growth in production scale MOVPE systems
B. Schineller1, H. Protzmann1, M. Luenenbuerger1, M. Heuken1, E.V. Lutsenko2 and G.P. Yablonskii21 AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany
2 Stepanov Institute of Physics, National Academy of Sciences of Belarus, F. Skaryna Ave. 68, 220072 Minsk, Belarus
Abstract
We have developed the AIX 2000 G3 HT MOVPE system for large scale production of nitride semiconductors. Extensive numeric modeling of the reactor chamber has enabled us to establish process windows for the growth of nitride semiconductors. We report excellent wafer to wafer, on-wafer and run to run uniformities across all wavelength regions accessible to the InGaN material system. Laser action in GaN epitaxial layers and in InGaN/GaN quantum well heterostructures at optical excitation was achieved in a wide spectral interval from 370 nm up to 470 nm. The working temperature reached 580 K for the best multiple quantum well structures.
© EDP Sciences 2001