J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-987 - Pr3-994
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-987-Pr3-994

DOI: 10.1051/jp4:20013124

Structure and composition investigation of RPECVD SiCN and LPCVD BCN films

M.L. Kosinova1, N.I Fainer1, Yu.M. Rumyantsev1, M. Terauchi2, K. Shibata2, F. Satoh2, M. Tanaka2 and F.A. Kuznetsov1

1  Institute of Inorganic Chemistry, SB RAS, 3 Pr. Acad. Lavrentjev, Novosibirsk 630090, Russia
2  RISM, Tohoku University, Sendai, Japan

The silicon carbonitride films have been synthesised by RPECVD using a mixture of ammonia, helium and hexamethyldisilazane Si2NH(CH3)6 as a volatile single-source precursor. The boron carbonitride thin films have been grown by LPCVD using triethylamine borane complex N(C2H5)3.BH3 both with and without ammonia. Different techniques such as IR and Raman spectroscopy, ellipsometry, XPS, EDS, SEM, HREM, SAED and XRD using synchrotron radiation were used to study physical and chemical properties and structure. These films consist nanocrystals with size of 2-9 nrn distributed in amorphous matrix. Analysis of IR spectroscopy and XPS data of the SiCN films showed that silicon atoms form chemical bonds with nitrogen and carbon atoms.

© EDP Sciences 2001