J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-979 - Pr3-985
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-979-Pr3-985

DOI: 10.1051/jp4:20013123

Structure study of thin RPECVD CdxZn1-xS films

N.I. Fainer1, M.L. Kosinova1, Yu.M. Rumyantsev1, E.A. Maximovski1, M. Terauchi2, K. Shibata2, F. Satoh2, M. Tanaka2, N.P. Sysoeva1 and F.A. Kuznetsov1

1  Institute of Inorganic Chemistry, SB RAS, 3 Pr. Acad. Lavrentjev, Novosibirsk 630090, Russia
2  RISM, Tohoku University, Sendai, Japan

Thin CdxZn1-xS films have been deposited on Si(100), GaAs (100) and fused silica substrates at low pressure in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd/Zn(S2CN(C2H5)2)2 . C10H8N2 as single-source precursor. The influence of deposition conditions on physical and chemical properties of the films has been studied by ellipsometry, IR- and Raman spectroscopies, SEM, HREM, SAED, EDS and X-ray diffraction using synchrotron radiation. The zinc and cadmium concentration gradient along the film thickness was observed. The CdxZn1-xS film is substitution solid solution with hexagonal texture structure.

© EDP Sciences 2001