MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors

W.-C. Liu; H.-J. Pan; C.-H. Yen; K.-P. Lin; C.-Z. Wu; W.-H. Chiou; C.-Y. Chen

doi:doi:10.1051/jp4:20013116

Numéro		J. Phys. IV France Volume 11, Numéro PR3, Août 2001 Thirteenth European Conference on Chemical Vapor Deposition


Page(s)		Pr3-931 - Pr3-936
DOI		https://doi.org/10.1051/jp4:20013116

Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-931-Pr3-936
DOI: 10.1051/jp4:20013116

MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors

W.-C. Liu, H.-J. Pan, C.-H. Yen, K.-P. Lin, C.-Z. Wu, W.-H. Chiou and C.-Y. Chen

Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China

Abstract
We propose two InGaP/GaAs resonant tunneling bipolar transistors (RTBT's) with different superlattice (SL) structures in the emitters. Based on the calculations of transmission probability, the ground-state and first excited-state minibands are estimated. The electron transmission through SL structures is significantly determined by the electric field behaviors across the barriers. The specific designs of barrier width in the SL structures are responsible for two electron transport mechanisms of sequential RT conduction associated with the minibands. Experimentally, at higher current levels, the double- and quaternary-negative difference resistance (NDR) phenomena are respectively observed for both devices at 300K. Furthermore, the experimental results are in good agreement with the theoretical prediction.