J. Phys. IV France
Volume 11, Numéro PR3, Août 2001Thirteenth European Conference on Chemical Vapor Deposition
|Page(s)||Pr3-63 - Pr3-68|
J. Phys. IV France 11 (2001) Pr3-63-Pr3-68
Density functional study on the adsorption of DMAH on hydrogen terminated Si(111) surfacesT. Matsuwaki, T. Nakajima and K. Yamashita
Department of Chemical System Engineering, Graduate School of Engineering, University of Tokyo, Tokyo 113-8656, Japan
We have studied theoretically the initial process of aluminum chemical vapor deposition using dimethylaluminum hydride as a source gas. In particular, the reaction mechanism of selective deposition on hydrogen terminated Si(111) surfaces is investigated based on quantum chemical calculations using density functional theory. In addition to an experimentally suggested reaction model that produces a methane molecule, we have found that (1) there is a path that produces a hydrogen molecule ; and (2) rather high activation energies are needed for these reactions, the epitaxial growth of aluminum on the hydrogen terminated silicon surface.
© EDP Sciences 2001