J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-55 - Pr3-62
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-55-Pr3-62

DOI: 10.1051/jp4:2001307

Chemical vapor deposition of silicon carbide at various temperatures and surface area/volume ratios

W.G. Zhang and K.J. Hüttinger

Institut für Chemische Technik, Universität Karlsruhe, Kaiserstr. 12, 76128 Karlsruhe, Germany

Chemical vapor deposition of Sic from methyltrichlorosilane and hydrogen was studied as a function of temperature using substrates with different surface area / volume ratios. Deposition rates and composition of the deposits at various temperatures and surface area / volume ratios were determined as a function of reactor or substrate length, respectively. The gas phase composition was analyzed as a function of residence time. Si is deposited in high excess at low temperatures and especially low surface area / volume ratios. The unusual temperature dependence of the overall deposition rate with rate maxima at about 900 and 1025 °C is caused by temperature selective depositions of both, SiC and Si. Deposition of stoichiometric SiC and a continuous increase of the deposition rate are obtained at a high surface area / volume ratio. The results are discussed on the basis of a novel chemical model.

© EDP Sciences 2001