Numéro
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-55 - Pr3-62
DOI https://doi.org/10.1051/jp4:2001307
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-55-Pr3-62

DOI: 10.1051/jp4:2001307

Chemical vapor deposition of silicon carbide at various temperatures and surface area/volume ratios

W.G. Zhang and K.J. Hüttinger

Institut für Chemische Technik, Universität Karlsruhe, Kaiserstr. 12, 76128 Karlsruhe, Germany


Abstract
Chemical vapor deposition of Sic from methyltrichlorosilane and hydrogen was studied as a function of temperature using substrates with different surface area / volume ratios. Deposition rates and composition of the deposits at various temperatures and surface area / volume ratios were determined as a function of reactor or substrate length, respectively. The gas phase composition was analyzed as a function of residence time. Si is deposited in high excess at low temperatures and especially low surface area / volume ratios. The unusual temperature dependence of the overall deposition rate with rate maxima at about 900 and 1025 °C is caused by temperature selective depositions of both, SiC and Si. Deposition of stoichiometric SiC and a continuous increase of the deposition rate are obtained at a high surface area / volume ratio. The results are discussed on the basis of a novel chemical model.



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