Numéro
J. Phys. IV France
Volume 11, Numéro PR2, Juillet 2001
X-Ray Lasers 2000
Page(s) Pr2-473 - Pr2-477
DOI https://doi.org/10.1051/jp4:2001290
7th International Conference on X-Ray Lasers

J. Phys. IV France 11 (2001) Pr2-473-Pr2-477

DOI: 10.1051/jp4:2001290

Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast X-ray diffraction

K. Sokolowski-Tinten1, M. Horn von Hoegen1, D. von der Linde2, A. Cavalleri3, C.W. Siders3, 4, F.L.H. Brown3, D.M. Leitner3, Cs. Tóth5, J.A. Squier6, C.P.J. Barty7, K.R. Wilson3 and M. Kammler8

1  Institute for Laser- and Plasmaphysics, University of Essen, 45117 Essen, Germany
2  Institute for Laser- and Plasmaphysics, University of Essen, 45117 Essen, Germany.
3  Department of Chemistry and Biochemistry, University of California San Diego, La Jolla, CA 92093-0339, U.S.A.
4  School of Optics/CREOL, University of Central Florida, Orlando, FL 32816-2700, U.S.A.
5  Institute for Nonlinear Science, University of California San Diego, La Jolla, CA 92093-0339, U.S.A.
6  Department of Electrical Engineering, University of California San Diego, La Jolla, CA 92093-0339, U.S.A.
7  Department of Applied Mechanics and Engineering Sciences, University of California San Diego, La Jolla, CA 92093-0339, U.S.A.
8  lnstitute for Solid State Physics, University of Hannover, 30167 Hannover, Germany


Abstract
Using time-resolved x-ray diffraction ultafast lattice dynamics in fs-laser-excited crystalline bulk Ge and Ge/Si-heterostructures has been studied. This experimental technique uniquely allows us to observe fast energy transport deep into the bulk of the material, coherent acoustic phonon dynamics, lattice anharmonicity, and vibrational transport across a buried interface.



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