| Numéro |
J. Phys. IV France
Volume 10, Numéro PR6, April 2000
The Sixth Japan-France Materials Science SeminarJFMSS-6 Microstructural Design for Improved Mechanical Behaviour of Advanced Materials |
|
|---|---|---|
| Page(s) | Pr6-3 - Pr6-8 | |
| DOI | https://doi.org/10.1051/jp4:2000601 | |
JFMSS-6
Microstructural Design for Improved Mechanical Behaviour of Advanced Materials
J. Phys. IV France 10 (2000) Pr6-3-Pr6-8
DOI: 10.1051/jp4:2000601
Synthesis and oxidation resistance of MoSi2-SiC composites
K. Kurokawa1, M. Ube1, Hideaki Takahashi1 and Heishichiro Takahashi21 Graduate School of Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo 060-8628, Japan
2 Center for Advanced Research of Energy Technology, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo 060-8628, Japan
Abstract
Synthesis of fully dense MoSi2-SiC composites without Si02-inclusions was
performed, and oxidation behavior of the composites was studied. For the
fabrication of MoSi2 and MoSi2-SiC composites, the mixed powders
consisting of elemental Mo, Si and C were sintered at 1673 or 1873 K with a
spark plasma sintering method. Namely, in-situ synthesis of MoSi2 and SiC
and sintering of the compounds were simultaneously performed. As the
result, fully dense MoSi2 and MoSi2 composites which little contain SiO2
inclusions were fabricated. Oxidation tests of the sintered bodies were
carried out in air at 773 K in the accelerated oxidation region and 1773 K in
the passive oxidation region. In the composites, occurrence of simultaneous
oxidation of Mo and Si in the accelerated oxidation region was remarkably
suppressed. In oxidation at 1773 K, the composites show outstanding
oxidation resistance by a formation of a protective SiO2 layer.
© EDP Sciences 2000