J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic Crystals
Page(s) Pr10-157 - Pr10-160
International Workshop on Electronic Crystals

J. Phys. IV France 09 (1999) Pr10-157-Pr10-160

DOI: 10.1051/jp4:19991040

Mesoscopic NbSe3 wires

H.S.J. van der Zant1, A. Kalwij1, O.C. Mantel1, N. Markovic1, Yu.I. Latyshev2, B. Pannetier2 and P. Monceau2

1  Department of Applied Physics and DIMES, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
2  Centre de Recherches sur les Très Basses Températures, associé à l'Université Joseph Fourier, CNRS, BP. 166, 38042 Grenoble cedex 9, France

We have fabricated wire structures with (sub)micron sizes in the charge-density wave conductor NbSe3. Electrical transport measurements include complete mode-locking on Shapiro steps and show that the patterning has not affected the CDW material. Our mesoscopic wires show strong fluctuation and hysteresis effects in the low-temperature current-voltage characteristics, as well as a strong reduction of the phase-slip voltage. This reduction can not be explained with existing models. We suggest that single phase-slip events are responsible for a substantial reduction of the CDW strain in micron-sized systems.

© EDP Sciences 1999