| Issue |
J. Phys. IV France
Volume 09, Number PR10, December 1999
International Workshop on Electronic CrystalsECRYS-99 |
|
|---|---|---|
| Page(s) | Pr10-157 - Pr10-160 | |
| DOI | https://doi.org/10.1051/jp4:19991040 | |
International Workshop
on Electronic Crystals
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-157-Pr10-160
DOI: 10.1051/jp4:19991040
1 Department of Applied Physics and DIMES, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
2 Centre de Recherches sur les Très Basses Températures, associé à l'Université Joseph Fourier, CNRS, BP. 166, 38042 Grenoble cedex 9, France
© EDP Sciences 1999
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-157-Pr10-160
DOI: 10.1051/jp4:19991040
Mesoscopic NbSe3 wires
H.S.J. van der Zant1, A. Kalwij1, O.C. Mantel1, N. Markovic1, Yu.I. Latyshev2, B. Pannetier2 and P. Monceau21 Department of Applied Physics and DIMES, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
2 Centre de Recherches sur les Très Basses Températures, associé à l'Université Joseph Fourier, CNRS, BP. 166, 38042 Grenoble cedex 9, France
Abstract
We have fabricated wire structures with (sub)micron sizes in the charge-density wave conductor NbSe3.
Electrical transport measurements include complete mode-locking on Shapiro steps and show that the patterning has
not affected the CDW material. Our mesoscopic wires show strong fluctuation and hysteresis effects in the low-temperature
current-voltage characteristics, as well as a strong reduction of the phase-slip voltage. This reduction
can not be explained with existing models. We suggest that single phase-slip events are responsible for a substantial
reduction of the CDW strain in micron-sized systems.
© EDP Sciences 1999