| Numéro |
J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic CrystalsECRYS-99 |
|
|---|---|---|
| Page(s) | Pr10-83 - Pr10-84 | |
| DOI | https://doi.org/10.1051/jp4:19991021 | |
International Workshop
on Electronic Crystals
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-83-Pr10-84
DOI: 10.1051/jp4:19991021
1 School of Applied and Engineering Physics, Cornell University, Ithaca, NY, U.S.A.
2 Department of Physics, Cornell University, Ithaca, NY, U.S.A.
© EDP Sciences 1999
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-83-Pr10-84
DOI: 10.1051/jp4:19991021
Sliding charge-density waves as rough growth surfaces
J.D. Brock1, K.L. Ringland1, A.C. Finnefrock1, Y. Li1, S.G. Lemay2 and R.E. Thorne21 School of Applied and Engineering Physics, Cornell University, Ithaca, NY, U.S.A.
2 Department of Physics, Cornell University, Ithaca, NY, U.S.A.
Abstract
Using high-resolution x-ray scattering techniques we have measured the transverse
structure of the sliding charge-density wave (CDW) in NbSe3. For temperatures
between 70 K and 120 K and for applied currents up to 40x the threshold current for
sliding, the scattering peak for the sliding CDW is significantly broader than that for the
pinned CDW, indicating that the sliding state is less correlated than the pinned state.
Using scaling analysis, we show that the CDW phase roughness exponent α rises from
0.60 ± 0.10 in the pinned state to 0.80 ± 0.10 in the sliding state.
© EDP Sciences 1999