J. Phys. IV France
Volume 09, Numéro PR8, September 1999Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
|Page(s)||Pr8-769 - Pr8-775|
J. Phys. IV France 09 (1999) Pr8-769-Pr8-775
RPECVD thin silicon carbonitride films using hexamethyldisilazaneN.I. Fainer, M.L. Kosinova, Yu.M. Rumyantsev and F.A. Kuznetsov
Institute of Inorganic Chemistry, SB RAS, Novosibirsk-90, Russia
The thin films of silicon carbonitride were synthesised by remote plasma enhanced chemical vapour deposition at low pressure (10-2-10-1 Torr) and low temperatures (473-773 K). Hexamethyldisilazane (Si2NH(CH3)6) was used as a volatile single-source precursor. Helium was used as a dilution gas. The thickness, optical characteristics, element contents, types of chemical bonds, crystalline structure, phase composition and microhardness of these films were investigated in dependence on the growth conditions.
© EDP Sciences 1999