J. Phys. IV France
Volume 09, Numéro PR8, September 1999Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
|Page(s)||Pr8-717 - Pr8-724|
J. Phys. IV France 09 (1999) Pr8-717-Pr8-724
Plasma-enhanced chemical vapour deposition and structural characterization of amorphous chalcogenide filmsP. Nagels, R. Callaerts and R. Mertens
Ruca, University of Antwerp, 2020 Antwerpen, Belgium
The preparation of amorphous layers of the binary systems GexSe100-x and AsxS100-x by plasmaenhanced chemical vapour deposition is described. The hydrides GeH4, H2Se, H2S and AsH3 were used as precursor gases. The influence of the gas ratios on the chemical composition of the binary systems was examined. For the GexSe100-x system, films with composition covering the whole range (0≤x≤100) were prepared. Deposition of the GexSe100-x system at increasing substrate temperature (up to 250°C) yielded films with increasing Ge concentration. The incorporation of sulfur in the AsxS100-x system was less effective : maximum 69 at.% of S for an AsH3/H2S ratio equal to 1/99. Infrared and Raman spectra revealed that both amorphous systems are microheterogeneous in structure, indicated by the presence of various discrete molecular units.
© EDP Sciences 1999