J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Page(s) Pr8-667 - Pr8-673
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-667-Pr8-673

DOI: 10.1051/jp4:1999884

MOCVD of SnO2 thin films from a new organometallic precursor

D. Barreca1, S. Garon2, P. Zanella2 and E. Tondello1

1  Dipartimento di Chimica Inorganica, Metallorganica ed Analitica, Centro di Studio sulla Stabilità e Reattività dei Composti di Coordinazione del CNR, Università di Padova, via Marzolo 1, 35131 Padova, Italy
2  Istituto di Chimica e Tecnologie Inorganiche dei Materiali Avanzati del CNR, corso Stati Uniti 4, 35127 Padova, Italy

The present work deals with the use and advantages of diethylaminodimethylstannane(IV) (I) as precursor for the CVD of SnO2 thin films. The films are deposited on α-Al2O3 and SiO2/Si(100) in O2+H2O atmospheres, at temperatures ranging from 400 to 500°C. High-purity, nanocrystalline layers with (101) preferential orientation are always obtained. A novel procedure for doping SnO2 films with RuO2, which consists in a chemical bath deposition on tin dioxide layers, is also described. Particular emphasys is given to the possibility of tailoring material properties by a proper choice of the synthesis conditions. The thermal decomposition pattern of the precursor (I) is studied by an 1H-NMR analysis of its pyrolysis byproducts. The microstructure of the samples is investigated by XRD, while their surface and in-depth chemical composition is studied by XPS. The morphology of the films and its dependance on the nature of the growth surface is examined by AFM. Electrical measurements indicate that RuO2 introduction in the SnO2 host matrix induces an appreciable enhancement of the layer conductivity.

© EDP Sciences 1999