Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-667-Pr8-673
DOI: 10.1051/jp4:1999884

MOCVD of SnO₂ thin films from a new organometallic precursor

D. Barreca¹, S. Garon², P. Zanella² and E. Tondello<sup>1

1</sup>  Dipartimento di Chimica Inorganica, Metallorganica ed Analitica, Centro di Studio sulla Stabilità e Reattività dei Composti di Coordinazione del CNR, Università di Padova, via Marzolo 1, 35131 Padova, Italy
²  Istituto di Chimica e Tecnologie Inorganiche dei Materiali Avanzati del CNR, corso Stati Uniti 4, 35127 Padova, Italy

Abstract
The present work deals with the use and advantages of diethylaminodimethylstannane(IV) (I) as precursor for the CVD of SnO₂ thin films. The films are deposited on α-Al₂O₃ and SiO₂/Si(100) in O₂+H₂O atmospheres, at temperatures ranging from 400 to 500°C. High-purity, nanocrystalline layers with (101) preferential orientation are always obtained. A novel procedure for doping SnO₂ films with RuO₂, which consists in a chemical bath deposition on tin dioxide layers, is also described. Particular emphasys is given to the possibility of tailoring material properties by a proper choice of the synthesis conditions. The thermal decomposition pattern of the precursor (I) is studied by an ¹H-NMR analysis of its pyrolysis byproducts. The microstructure of the samples is investigated by XRD, while their surface and in-depth chemical composition is studied by XPS. The morphology of the films and its dependance on the nature of the growth surface is examined by AFM. Electrical measurements indicate that RuO₂ introduction in the SnO₂ host matrix induces an appreciable enhancement of the layer conductivity.

© EDP Sciences 1999