| Numéro |
J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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| Page(s) | Pr8-341 - Pr8-347 | |
| DOI | https://doi.org/10.1051/jp4:1999842 | |
J. Phys. IV France 09 (1999) Pr8-341-Pr8-347
DOI: 10.1051/jp4:1999842
Growth of high crystalline quality thin epitaxial CeO2 films on (1102) sapphire
K. Fröhlich1, D. Machajdík1, L. Hellemans2 and J. Snauwaert21 Institute of Electrical Engineering, SAS, Dúbravská Cesta 9, 84239 Bratislava, Slovak Republic
2 Department of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, 3001 Leuven, Belgium
Abstract
We have prepared (001) oriented epitaxial CeO2 films on (1102) sapphire by metal organic chemical vapour deposition. The film thickness was in the range from 10 to 100 nm. The films exhibit extremely degree of preferred orientation, having half width at half maximum (FWHM) values of the X-ray diffraction rocking curve of the (002) CeO2, reflection as low as 0.05°. This value is comparable to the FWHM of the rocking curve of the single crystal. We show the evolution of CeO2 the film rocking curve as a function of the thickness, deposition temperature and quality of the substrate. These results are compared with atomic force microscopy images of the film surface. A possible mechanism of the growth of CeO2 films exhibiting narrow peak of the rocking curve is discussed.
© EDP Sciences 1999