Numéro
J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Page(s) Pr8-189 - Pr8-196
DOI https://doi.org/10.1051/jp4:1999823
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-189-Pr8-196

DOI: 10.1051/jp4:1999823

LPCVD vertical furnace optimization for undoped polysilicon film deposition

A.M. Rinaldi1, S. Carrà,2, M. Rampoldi2, M.C. Martignoni2 and M. Masi2

1  MEMC Electronic Materials SpA, viale Gherzi 31, 28100 Novara, Italy
2  Dipartimento di Chimica Fisica Applicata, Politecnico di Milano, via Mancinelli 7, 20131 Milano, Italy


Abstract
thin film polysilicon deposition is a basic process in microelectronics, usually carried in hot wall horizontal tubular reactors. With increasing wafer dimension and tighter specifications, unifonnity performance cannot be met without significant productivity losses. Recently, new vertical reactors were introduced also to overcome those issues. Here the optimization of one of these growth apparatus is presented, being it carried through a suitable combination of experimental data (growth rates, intrinsic stress) and a modeling analysis. The model consists of two mono-dimensional parts (for the inter-wafer region and for the annular region) and it is capable of quantitative estimates of growth rates, under quite varying process conditions.



© EDP Sciences 1999