J. Phys. IV France
Volume 09, Numéro PR8, September 1999Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
|Page(s)||Pr8-1029 - Pr8-1034|
J. Phys. IV France 09 (1999) Pr8-1029-Pr8-1034
Diamond nuclei formation in a microwave plasma assisted chemical vapor deposition (MWCVD) systemM.M. García, L. Vázquez, C. Gómez-Aleixandre and O. Sánchez
Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
Bias-enhanced nucleation of diamond on Si, and the following growth until a continuos film, using a MWCVD system, has been studied by surface techniques of high resolution as Angle-Dependent X-ray Absorption Near-Edge Spectroscopy and Atomic Force Microscopy. It has been observed that the evolution of diamond nucleation is according to Tomellini's model : sequence of active sites, germs and nuclei. The nuclei growth starts on top of a graphitic layer which is formed by subplantation as a consequence of the ionic bombardment during the nucleation. The bias-enhanced nucleation time affects to the sample morphology. Diffusion processes on the surface in the diamond nucleation will be also discussed.
© EDP Sciences 1999